CHM3301JPT -7.0 c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t p-channel enhancement mode field effect transistor voltage 30 volts current 7.0 ampere a p p l i c a t i o n f e a t u r e * super high dense cell design for extremely low r ds(on) . construction * p-channel enhancement * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . c/w 2006-12 (note 3) * high power and current handing capability. note : 1. surface mounted on fr4 board , t <=10sec * lead free product is acquired. 2. pulse test , pulse width <= 300us , duty cycle <= 2% -25 c i r c u i t a b s o l u t e m a x i m u m r a t i n g s t a d i m e n s i o n s i n m i l l i m e t e r s = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l so-8 parameter CHM3301JPT * small flat package. (so-8 ) t units j v dss drain-source voltage operating temperature range -30 -55 to 150 v c 3. repetitive rating , pulse width linited by maximum junction temperature (note 1) 4. guaranteed by design , not subject to production trsting v so-8 gss gate-source voltage 20 v i d maximum drain current - continuous a - pulsed p d maximum power dissipation 1 2500 4 mw 8 t 5 stg storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 50 1.27 ( 0.05 )bsc .51 ( 0.02 0 ) .10 (0.012) .25 ( 0.010 ) .17 (0.007) 4.06 ( 0.160 ) 3.70 ( 0.146 ) 5.00 ( 0.197 ) 4.69 ( 0.185 ) 1.75 (0.069) 1.35 ( 0.053 ) 6.20 ( 0.244 ) 5.80 ( 0.228 ) .25 ( 0.010 ) .05 (0.002) 1 4 5 8 s s s g d d d d marking * 3301
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM3301JPT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s -1 o f f c h a r a c t e r i s t i c s b v d s s drain-source breakdown voltage 32 v o n c h a r a c t e r i s t i c s gs g = 0 v, i d fs forward transconductance v = -250 a ds n a -30 = -10v v n a , i i d dss s = -6.0a zero gate voltage drain current i r v ds(on) ds static drain-source on-resistance gate-body leakage m w = vgs=-10v, id=-6.0a gate-body leakage -30 v, v v gs gs = 20v, = 0 v v ds = 0 v switching a characteristics +100 -100 v gs = -20v, v q gs ds gate-source charge = 0 v q gd gate-drain charge t on v turn-on time gs ns (th) v gate threshold voltage dd v = -15v ds i d = v = -1.0a gs , , i v d g = -250 a s = -10 v 25 t r rise time -1 15 v vgs=-4.5v, id=-4.0a 115 t f fall time 45 q g total gate charge 2.5 vds=-15v, id=-6.0a vgs=-10v turn-off time t off rgen= 6 w (note 2) (note 4) -3 5 s nc 13 6 58 22 drain-source diode characteristics and maximum ratings 19 25 v sd drain-source diode forward current drain-source diode forward voltage i s = -1.0a , v g s = 0 v -7.0 -1.2 a v (note 1) (note 2) 50 26 38 gssf i i gssr 4
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM3301JPT ) t y p i c a l e l e c t r i c a l c h a r a c t e r i s t i c s 0 2.0 4.0 0 10 20 50 6.0 30 40 v , drain-to-source voltage (v) i , dr a in current (a) ds d figure 1. output characteristics v 8.0v gs= 10v v gs= 5.0v v gs= 3.0v 10 0 i , dr a in current (a) d 0 2 4 vgs , gate-to-source voltage (v) figure 2. transfer characteristics j=25c t j=125c t j=-55c t 1.0 2.0 5.0 6 8 10 0 5 10 15 20 0 2 4 6 8 qg , total gate charge (nc) vgs , gate to source voltage (v) figure 3. gate charge id=-6a vds=-15v 2.2 0.7 -100 1.0 1.6 t , jun ctio n t emperature (c) j 0.4 1.3 1.9 d r a i n - s o u r c e o n - r e s i s t a n c e r , no r m a l i z e d d s ( o n ) f i g u r e 4 . on-resistance variation with temperature id=-6.0a vgs=-10v -50 0 50 100 150 200 temperature 1.3 0.7 -50 -25 0 25 50 75 100 125 150 0.9 1.1 t , jun ctio n t emperature (c) j 0.6 0.8 1.0 1.2 threshold voltage vth , normalized gate-source figure 5. gate threshold variation with id=250ua vds=vgs 6.0 3.0 4.0 v gs= 4.0v v gs= 6.0v
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